The NexSys 240 W (NC240S) is an ultra-compact, high-performance AC-DC adapter integrating NexGen Vertical GaN® technology and is designed to power laptop and notebook-type computers with universal AC input range of 90-264 VAC and 240 W of output power.
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Most GaN technologies today follow a lateral architecture that do not allow for easy scalability. For increased current and voltage the device architecture must grow laterally. However, this results in limited vertical growth due to the already thick EPI material due to the insulating buffer layers. This leading to a larger, less reliable power semiconductor.
NexGen Helios™ Universal 20W Isolated Power Module, The world’s smallest and most efficient LED Power Module. Power density that is 2x higher on average than competitive LED drivers.
NexGen Vertical GaN junction field effect transistors (JFETs) are made from gallium nitride (GaN). They use a vertical GaN-on-GaN device structure which delivers high switching frequencies at blocking voltages from 700V to 1200V and higher. These devices have very low conduction and switching losses enabling systems with higher efficiencies. Thus, making it an ideal power semiconductor for applications from LED Lighting and Computing to Data Centers and Electric Vehicles. The world's first 700V and 1200V Vertical GaN semiconductors are available to customers!
#Best Power Semiconductor
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#Best Power Semiconductor
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NexGen’s power supply solutions are built on a truly scalable, software configurable platform with World’s first GaN-on-GaN power semiconductor. Power conversion systems with NexGen Vertical GaN™.
NexGen's white paper provides an update on the robustness of their Vertical GaN technology, specifically its Avalanche and Short Circuit capability. The paper discusses the significance of these capabilities for GaN transistor applications and presents test results that highlight the great avalanche and short circuit robustness qualities of GaN Fin-JFETs.
The whitepaper "NexGen Vertical GaN - Superior FoM for Hard and Soft Switching Applications" highlights the exceptional Figure of Merit (FoM) offered by NexGen's Vertical GaN technology for both Hard and Soft Switching applications. The paper provides insights into the significance of FoM in power technology and design quality, while also delving into its relevance specifically in the context of Hard and Soft Switching.
Miniaturizing LED Drivers with NexGen Vertical GaN The key to smaller and sleeker Lighting Designs is the miniaturization of LED Drivers, as they are amongst the bulkiest components in the system. However, in terms of size, lifespan, and control capability, LED innovation has outpaced the LED Drivers powering them. NexGen Power Systems aims to close this gap with cutting-edge power technology.
Technical Document 3.7 kV Vertical GaN P-N Diodes NexGen's Vertical GaN devices provide high breakdown voltages for power electronics applications In this technical document we discuss: High breakdown voltage Vertical GaN devices Growth and fabrication of these devices Measurement and characterization of these devices.